Exploring Electrical and Thermal Properties of Surrounding Gate FETs and FinFET Transistors: Insights from Simulation and Experimentation

EasyChair Preprint no. 13081

Abstract

Surrounding Gate FETs and FinFET transistors are interesting options for semiconductor technology, and this study looks into their electrical and thermal properties. We have produced encouraging simulation findings that agree well with both experimental and numerical data, using an electrothermal model that integrates the new Stephan-Boltzmann model, the enhanced Ballistic-Diffusive model, and the enhanced Drift-Diffusion model. Further examination of the Surrounding Gate FET indicates the appearance of phonon radiation effects when the channel length is reduced to 10 nm.

Keyphrases: electrical and thermal behavior, electrothermal model, FET Surrounding Gate, FinFET transistors, radiation effect

@Booklet{EasyChair:13081,
  author = {Zina Guesmi and Faouzi Nasri and Sayed Missaoui},
  title = {Exploring Electrical and Thermal Properties of Surrounding Gate FETs and FinFET Transistors: Insights from Simulation and Experimentation},
  howpublished = {EasyChair Preprint no. 13081},

  year = {EasyChair, 2024}}