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Electromechanical Properties of Monolayer Sn-dichalcogenides

EasyChair Preprint no. 3977

6 pagesDate: July 30, 2020


We investigate electromechanical properties of monolayer SnX2 (X = Se, Te) with 1T structure as a function of charge (electron and hole) doping by using first-principles calculations. We find that the monolayer SnSe2 shows a semiconductor-metal transition for the case of heavy electron doping, while SnTe2 retains the metallic properties under both electron and hole dopings. The actuation strain of SnX2 in the case of electron doping is substantially larger than those of hole doping. Moreover, the effect of charge doping on ideal strength and ideal strain of the monolayer SnX2 is also discussed.

Keyphrases: artificial muscles, density functional theory, ideal strength

BibTeX entry
BibTeX does not have the right entry for preprints. This is a hack for producing the correct reference:
  author = {Bach Le Xuan and Thanh Vuong Van and Bao Hoang Van and Do Van Truong and Hung Nguyen Tuan},
  title = {Electromechanical Properties of Monolayer Sn-dichalcogenides},
  howpublished = {EasyChair Preprint no. 3977},

  year = {EasyChair, 2020}}
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